BTA212B-600F ,3Q Hi-Com Triac
BTA212B-600F ,3Q Hi-Com Triac
BTA212B-600F ,3Q Hi-Com TriacGENERAL DESCRIPTION QUICK REFERENCE DATAPassivated guaranteed commutation SYMBOL PARAMETER MAX. ..
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BTA212X-600B ,3Q Hi-Com Triac
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BZX84C10S-7-F , DUAL 200mW SURFACE MOUNT ZENER DIODE
BZX84C10T-7-F , 150mW SURFACE MOUNT ZENER DIODE
BZX84C10V ,Small Signal Zener Diodes Document Number 857632 Rev. 1.7, 14-Jul-05BZX84-V-SeriesVishay Semiconductors
BZX84C10W-7-F , 200mW SURFACE MOUNT ZENER DIODE
BTA212B-600F
3Q Hi-Com Triac
��� Semiconductors �Product specification
Three quadrant triacs BTA212B series D, E and F
guaranteed commutation
GENERAL DESCRIPTION QUICK REFERENCE DATAPassivated guaranteed commutation
SYMBOL PARAMETER MAX. MAX UNITtriacsina plastic envelope suitable for
surface mounting intended for usein
BTA212B- 600Dmotor control circuitsor with other highly
BTA212B- 600E 800Einductive loads. These devices balance
BTA212B- 600Fthe requirements of commutation VDRM Repetitive peak off-state 600 800 V
performance and gate sensitivity. The voltages
"sensitive gate"E series and "logic level" IT(RMS) RMS on-state current 12 12 A series are intendedfor interfacing with ITSM Non-repetitive peak on-state 95 95 A
low power drivers, including micro current
controllers.
PINNING - SOT404 PIN CONFIGURATION SYMBOL
PIN DESCRIPTION main terminal 1 main terminal 2 gate main terminal 2
LIMITING VALUESLimiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
-600 -800VDRM Repetitive peak off-state - 6001 800 V
voltages
IT(RMS) RMS on-state current full sine wave; - 12 A
Tmb ≤ 99 ˚CITSM Non-repetitive peak full sine wave;
on-state current Tj = 25 ˚C prior to
surge t = 20 ms - 95 A
t = 16.7 ms - 105 A2 tI2 t for fusing t = 10 ms - 45 A2sdIT/dt Repetitive rate of rise of ITM = 20 A; IG = 0.2 A; 100 A/μs
on-state current after dIG/dt = 0.2 A/μs
triggeringIGM Peak gate current - 2 A
PGM Peak gate power - 5 W
PG(AV) Average gate power over any 20 ms - 0.5 Wperiod
Tstg Storage temperature -40 150 ˚C Operating junction - 125 ˚CtemperatureT2
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
��� Semiconductors Product specification
Three quadrant triacs BTA212B series D, E and F
guaranteed commutation
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNITRth j-mb Thermal resistance full cycle - - 1.5 K/W
junction to mounting base half cycle - - 2.0 K/W
Rth j-a Thermal resistance in free air - 55 - K/W
junction to ambient
STATIC CHARACTERISTICSj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
BTA212B- ...D ...D ...E ...FIGT Gate trigger current2 VD = 12 V; IT = 0.1 A
T2+ G+ - 5 10 25 mA
T2+ G- - 5 10 25 mA
T2- G- - 5 10 25 mA Latching current VD = 12 V; IGT = 0.1 A
T2+ G+ - 15 25 30 mA
T2+ G- - 25 30 40 mA
T2- G- - 25 30 40 mA Holding current VD = 12 V; IGT = 0.1 A - 15 25 30 mA
...D, E, FT On-state voltage IT = 17 A - 1.6 V
VGT Gate trigger voltage VD = 12 V; IT = 0.1 A 1.5 V
VD = 400 V; IT = 0.1 A; 0.25 - VTj = 125 ˚C Off-state leakage current VD = VDRM(max); Tj = 125 ˚C - 0.5 mA
DYNAMIC CHARACTERISTICSTj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
BTA212B- ...D ...E ...FdVD/dt Critical rate of rise of VDM = 67% VDRM(max);20 60 70 - V/μs
off-state voltage Tj = 110 ˚C; exponential
waveform; gate open
circuit
dIcom/dt Critical rate of change of VDM = 400 V; Tj = 125 ˚C; 1.0 8 21 - A/ms
commutating current IT(RMS) = 12 A;
dVcom/dt = 10V/μs; gate
open circuit
dIcom/dt Critical rate of change of VDM = 400 V; Tj = 125 ˚C; 3.5 16 32 - A/ms
commutating current IT(RMS) = 12 A;
dVcom/dt = 0.1V/μs; gate
open circuit
2 Device does not trigger in the T2-, G+ quadrant.
��� Semiconductors �Product specification
Three quadrant triacs BTA212B series D, E and F
guaranteed commutation
Fig.1. Maximum on-state dissipation, Ptot, versus rms
on-state current, IT(RMS), where α = conduction angle.
Fig.2. Maximum permissible non-repetitive peak
on-state current ITSM, versus pulse width tp, for
sinusoidal currents, tp ≤ 20ms.
Fig.4. Maximum permissible rms current IT(RMS) ,
versus mounting base temperature Tmb.
Fig.5. Maximum permissible repetitive rms on-state
current IT(RMS), versus surge duration, for sinusoidal
currents, f = 50 Hz; Tmb ≤ 99˚C. 5 10 150
IT(RMS) / A
Ptot / W Tmb(max) / C
-50 0 50 100 1500
99 C
Tmb / C
IT(RMS) / A
10us 100us 1ms 10ms 100ms10
T / s
ITSM / A
0.01 0.1 1 100
surge duration / s
IT(RMS) / A 10 100 10000
ITSM / A
-50 0 50 100 1500.4
VGT(Tj)
VGT(25 C)
��� Semiconductors �Product specification
Three quadrant triacs BTA212B series D, E and F
guaranteed commutation
Fig.7. Normalised gate trigger current
IGT(Tj)/ IGT(25˚C), versus junction temperature Tj.
Fig.8. Normalised latching current IL(Tj)/ IL(25˚C),
versus junction temperature Tj.
Fig.10. Typical and maximum on-state characteristic.
Fig.11. Transient thermal impedance Zth j-mb, versus
pulse width tp.
-50 0 50 100 150
Tj/°C
IGT(Tj)IGT(25°C) 0.5 1 1.5 2 2.5 30
VT / V
IT / A
-50 0 50 100 1500
Tj / C
IL(Tj)
IL(25 C)
tp / s
Zth j-mb (K/W)
10us 0.1ms 1ms 10ms 0.1s 1s 10s
-50 0 50 100 1500
Tj / C
IH(Tj)
IH(25C)
102 40 60 80 100 120 140Tj (˚C)
dIcom/dt (A/ms)
103
��� Semiconductors �Product specification
Three quadrant triacs BTA212B series D, E and F
guaranteed commutation
MECHANICAL DATADimensions in mm
Net Mass: 1.4 g
Fig.13. SOT404 : centre pin connected to mounting base.
MOUNTING INSTRUCTIONSDimensions in mm
Fig.14. SOT404 : minimum pad sizes for surface mounting.
Notes1. Plastic meets UL94 V0 at 1/8".
11 max
4.5 max
1.4 max
10.3 max
0.85 max
(x2)
2.0
