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BU922P ,NPN power transistor for automotive ignition applications, 500V, 10AABSOLUTE MAXIMUM RATINGS
SOT-93
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BPW36
HERMETIC SILICON PHOTOTRANSISTOR
BPW36/BPW37 HERMETIC SILICON PHOTOTRANSISTOR FEATURES PACKAGE DIMENSIONS Hermetically sealed package Narrow reception angle European “Pro Electron” registered 0.209 (5.31) 0.184 (4.67) DESCRIPTION 0.030 (0.76) 0.255 (6.48) The BPW36/37 are silicon phototransistors NOM mounted in narrow angle TO-18 packages. 0.50 (12.7) SCHEMATIC MIN C 0.020 (0.51) 3X B Base 0.100 (2.54) 0.050 (1.27) Emitter Collector E (Case) 0.040 (1.02) 1. Derate power dissipation linearly 3.00 mW/°C above 25°C ambient. Ø0.100 (2.54) 0.040 (1.02) 2. Derate power dissipation linearly 6.00 mW/°C above 25°C case. 45° 3. RMA flux is recommended. 4. Methanol or isopropyl alcohols are recommended as cleaning agents. 5. Soldering iron tip 1/16” (1.6mm) minimum from housing. 6. As long as leads are not under any stress or spring tension. NOTES: 7. Light source is a GaAs LED emitting light at a peak wavelength of 940 nm. 1. Dimensions for all drawings are in inches (mm). 2. Tolerance of ± .010 (.25) on all non-nominal dimensions unless otherwise specified. (T = 25°C unless otherwise specified) ABSOLUTE MAXIMUM RATINGS A Parameter Symbol Rating Unit Operating Temperature T -65 to +125 °C OPR Storage Temperature T -65 to +150 °C STG (3,4,5 and 6) Soldering Temperature (Iron) T 240 for 5 sec °C SOL-I (3,4 and 6) Soldering Temperature (Flow) T 260 for 10 sec °C SOL-F Collector-Emitter Voltage V 45 V CEO Collector-Base Voltage V 45 V CBO Emitter-Base Voltage V 5V EBO (1) Power Dissipation (T = 25°C) P 300 mW A D (2) Power Dissipation (T = 25°C) P 600 mW C D 2001 DS300279 3/13/01 1 OF 4
