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BCR158FinfinenN/a2000avaiSingle digital (Built-In Resistor) AF-Transistors in TSFP-3 Package


BCR158F ,Single digital (Built-In Resistor) AF-Transistors in TSFP-3 PackageBCR158.../SEMB10PNP Silicon Digital Transistor• Switching circuit, inverter, interface circuit, d ..
BCR158T ,Digital TransistorsCharacteristics at T = 25°C, unless otherwise specifiedAParameter Symbol Values Unitmin. typ. max.D ..
BCR158W ,Digital TransistorsCharacteristics50 - -Collector-emitter breakdown voltage V V(BR)CEOI = 100 µA, I = 0 C BCollector-b ..
BCR158W ,Digital TransistorsBCR158...PNP Silicon Digital Transistor• Switching circuit, inverter, interface circuit, driver c ..
BCR162 ,PNP Silicon Digital Transistor (Switching circuit, inverter, interface circuit, drivere circuit)BCR162...PNP Silicon Digital Transistor• Switching circuit, inverter, interface circuit, driver c ..
BCR162T ,Digital TransistorsCharacteristics at T = 25°C, unless otherwise specifiedAParameter Symbol Values Unitmin. typ. max.D ..
BL-HG035A-TRB , Yellow Green Suitable for all SMT assembly methods.
BL-HG036A-AV-TR , SURFACE MOUNT CHIP LED LAMP
BL-HG036D-TRB , Yellow Green Suitable for all SMT assembly methods.
BL-HG036D-TRB , Yellow Green Suitable for all SMT assembly methods.
BL-HG036D-TRB , Yellow Green Suitable for all SMT assembly methods.
BL-HG633A-TRB , SURFACE MOUNT CHIP LED LAMPS SPECIFICATION


BCR158F
Single digital (Built-In Resistor) AF-Transistors in TSFP-3 Package
BCR158.../SEMB10
PNP Silicon Digital Transistor

• Switching circuit, inverter, interface circuit,
driver circuit
• Built in bias resistor (R1=2.2kΩ, R2=47kΩ)
• For 6-PIN packages: two (galvanic) internal
isolated transistors with good matching
in one package
BCR158/F/L3
BCR158T/W
SEMB10

EHA07183B
EHA07173B2E2B1E1
BCR158.../SEMB10
Maximum Ratings
Thermal Resistance
For calculation of RthJA please refer to Application Note Thermal Resistance
BCR158.../SEMB10
DC Characteristics
AC Characteristics
Pulse test: t < 300µs; D < 2%
BCR158.../SEMB10
DC current gain h
FE = ƒ(IC)CE = 5V (common emitter configuration)2 10 10 10 10
Collector-emitter saturation voltage
CEsat = ƒ(IC), hFE = 2010 10 10
Input on Voltage Vi
(on) = ƒ(IC)CE = 0.3V (common emitter configuration)
10
-1 10 10 10 10
Input off voltage V
i(off) = ƒ(IC)CE = 5V (common emitter configuration)
-3 10
-2 10
-1 10 10 10
BCR158.../SEMB10
Total power dissipation P
tot = ƒ(TS)
BCR158
50
100
150
200
300
tot
Total power dissipation P
tot = ƒ(TS)
BCR158F
50
100
150
200
300
tot
Total power dissipation P
tot = ƒ(TS)
BCR158L3
50
100
150
200
300
tot
Total power dissipation P
tot = ƒ(TS)
BCR158T
50
100
150
200
300
tot
BCR158.../SEMB10
Total power dissipation P
tot = ƒ(TS)
BCR158W
50
100
150
200
300
tot
Total power dissipation P
tot = ƒ(TS)
SEMB10
50
100
150
200
300
tot
Permissible Pulse Load
totmax/PtotDC = ƒ(tp)
BCR1580 10 10 10 10
totmax
totDC
Permissible Pulse Load R
thJS = ƒ(tp)
BCR158
10 0
-1 10 10 10 10 10
thJS
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