BC546A , 0.500W General Purpose NPN Plastic Leaded Transistor. 65V Vceo, 0.100A Ic, 110 Document Number 851134 Rev. 1.2, 02-Nov-04P -AdmissiblePowerDissipation(mW)r -PulseThermalResistan ..
BC546A , 0.500W General Purpose NPN Plastic Leaded Transistor. 65V Vceo, 0.100A Ic, 110Absolute Maximum RatingsT = 25 °C, unless otherwise specifiedambParameter Test condition Part Symbo ..
BC546A , 0.500W General Purpose NPN Plastic Leaded Transistor. 65V Vceo, 0.100A Ic, 110FeaturesC 1 • NPN Silicon Epitaxial Planar Transistors These transistors are subdivided into thre ..
BC546A , 0.500W General Purpose NPN Plastic Leaded Transistor. 65V Vceo, 0.100A Ic, 110
BC546A , 0.500W General Purpose NPN Plastic Leaded Transistor. 65V Vceo, 0.100A Ic, 110BC546/547/548/549/550BC546/547/548/549/550Switching and
BC546B , 0.500W General Purpose NPN Plastic Leaded Transistor. 65V Vceo, 0.100A Ic, 200Applications• High Voltage: BC546, V =65VCEO• Low Noise: BC549, BC550• Complement to BC556 ... BC56 ..
BF1005 ,RF-MOSFETCharacteristicsParameter Symbol Values Unitmin. typ. max.DC
BF1005R ,RF-MOSFETBF1005...Silicon N-Channel MOSFET Tetrode• For low noise, high gain controlled input stages up to ..
BF1005S ,RF-MOSFETBF1005S...Silicon N-Channel MOSFET Tetrode• For low noise, high gain controlled input stages up t ..
BF1005SR ,RF-MOSFETCharacteristicsParameter Symbol Values Unitmin. typ. max.DC
BF1005SR ,RF-MOSFETCharacteristics12 - - VDrain-source breakdown voltage V(BR)DSI = 650 µA, V = 0 , V = 0 D G1S G2S8 - ..
BF1009 ,Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 9 V Integrated stabilized bias network
BC546A-BC546B
