2SC2881 ,Transistor Silicon NPN Epitaxial Type (PCT process) Voltage Amplifier Applications Power Amplifier ApplicationsApplications High voltage: V = 120 V CEO High transition frequency: f = 120 MHz (typ.) T ..
2SC2881 ,Transistor Silicon NPN Epitaxial Type (PCT process) Voltage Amplifier Applications Power Amplifier Applications2SC2881 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2881 Voltage Amplifier
2SC2882 ,Transistor Silicon NPN Epitaxial Type (PCT process) Power Amplifier Applications Voltage Amplifier ApplicationsApplications Suitable for driver of 30 to 35 watts audio amplifier Small flat package P ..
2SC2883 ,TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) AUDIO POWER AMPLIFIER APPLICATIONSApplications Unit: mm Suitable for output stage of 3 watts amplifier Small flat package ..
2SC2884 ,TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) AUDIO POWER AMPLIFIER APPLICATIONSApplications Unit: mm High DC current gain: h = 100 to 320 FE Suitable for output stage of ..
2SC2884 ,TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) AUDIO POWER AMPLIFIER APPLICATIONS2SC2884 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2884 Audio Frequency Amp ..
2SJ337 ,Very High-Speed Switching ApplicationsFeatures. Low ON resistance.- Very high-speed switching.. Low-voltage drive.
2SJ345 ,Field Effect Transistor Silicon P Channel MOS Type High Speed Switching Applications Analog Applications
2SJ355 ,P-CHANNEL MOS FET FOR HIGH SWITCHINGDATA SHEETMOS FIELD EFFECT TRANSISTOR2SJ355P-CHANNEL MOS FETFOR HIGH SWITCHINGThe 2SJ355 is ..
2SJ355-T1 ,P-channel MOS FET (-30V, +-2A)DATA SHEETMOS FIELD EFFECT TRANSISTOR2SJ355P-CHANNEL MOS FETFOR HIGH SWITCHINGThe 2SJ355 is ..
2SJ355-T1 ,P-channel MOS FET (-30V, +-2A)DATA SHEETMOS FIELD EFFECT TRANSISTOR2SJ355P-CHANNEL MOS FETFOR HIGH SWITCHINGThe 2SJ355 is ..
2SJ356 ,P-CHANNEL MOS FET FOR HIGH-SPEED SWITCHINGDATA SHEETMOS FIELD EFFECT TRANSISTOR2SJ356P-CHANNEL MOS FETFOR HIGH-SPEED SWITCHINGThe 2SJ ..
2SC2881
Transistor Silicon NPN Epitaxial Type (PCT process) Voltage Amplifier Applications Power Amplifier Applications
2SC2881 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC2881 Voltage Amplifier Applications
Power Amplifier Applications High voltage: VCEO = 120 V High transition frequency: fT = 120 MHz (typ.) Small flat package PC = 1.0 to 2.0 W (mounted on ceramic substrate) Complementary to 2SA1201
Maximum Ratings (Ta = 25°C) PC
Note 1: Mounted on ceramic substrate (250 mm2 × 0.8 t)
Unit: mm
Weight: 0.05 g (typ.)
