2N6349 ,TRIACS Silicon Bidirectional Triode ThyristorsTHERMAL CHARACTERISTICSCharacteristic Symbol Max Unit*Thermal Resistance, Junction to Case R 2.2 °C ..
2N6349 ,TRIACS Silicon Bidirectional Triode ThyristorsELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted; Electricals apply in both directions)C ..
2N6386 ,Conductor Products, Inc. - PLASTIC MEDIUM-POWER SILICON TRANSISTORS
2N6387 ,DARLINGTON SILICON POWER TRANSISTORSOrder this document**by 2N6387/DSEMICONDUCTOR TECHNICAL DATA* ** Motorola Preferred Device. . . de ..
2N6388 ,DARLINGTON SILICON POWER TRANSISTORSELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted)CCharacteristic Symbol Min Max UnitOFF ..
2N6388 ,DARLINGTON SILICON POWER TRANSISTORS32N6387 2N63887.0VCC5.0R AND R VARIED TO OBTAIN DESIRED CURRENT LEVELSB C + 30 V3.0D MUST BE FAST R ..
2SC3063 ,Power DeviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-ba ..
2SC3064 ,NPN Epitaxial Planar Silicon CompositeTransistorAbsolute Maximum Ratings at Ta=25°C _ unitCollector to Base Voltage Ircrso 55 IrCellector to Emitte ..
2SC3067 ,NPN Epitaxial Planar Silicon Transistor DIFFERENTIAL AMP APPLICATIONSFeatures. Excellent in thermal equilibrium and suiteddifferential amp.. Low noise.. Matched pair ca ..
2SC3068 ,NPN Epitaxial Planar Silicon Transistor High hFE, Low-Frequency General-Purpose Amplifier ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC3069 ,NPN Epitaxial Planar Silicon Transistor High hFE, Low-Frequency General-Purpose Amplifier ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC3070 ,NPN Epitaxial Planar Silicon Transistor High hFE, Low-Frequency General-Purpose Amplifier ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2N6349
TRIACS Silicon Bidirectional Triode Thyristors
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Preferred Device
Silicon Bidirectional ThyristorsDesigned primarily for full-wave ac control applications, such as
light dimmers, motor controls, heating controls and power supplies; or
wherever full–wave silicon gate controlled solid–state devices are
needed. Triac type thyristors switch from a blocking to a conducting
state for either polarity of applied main terminal voltage with positive
or negative gate triggering. Blocking Voltage to 800 Volts All Diffused and Glass Passivated Junctions for Greater Parameter
Uniformity and Stability Small, Rugged, Thermowatt Construction for Low Thermal
Resistance, High Heat Dissipation and Durability Gate Triggering Guaranteed in all Four Quadrants For 400 Hz Operation, Consult Factory Device Marking: Logo, Device Type, e.g., 2N6344, Date Code
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)(1) VDRM and VRRM for all types can be applied on a continuous basis. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
